In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied. The structure is characterized by the use of the base-gate short connection mode, instead of the conventional base-source short connection mode in SiC Vertical Double-diffusion MOSFET (VDMOS). It found that the device can obviously improve many problems of SiC Insulated Gate Bipolar transistor (IGBT) caused by the p-type substrates and eliminate the latch-up effect, having very bright prospects in high power and low frequency applications. The dynamic and static characteristics of the SiC GCBT are studied in detail and compared with SiC VDMOS, SiC IGBT and Si IGBT. Through comparative studies, the analysis results indicate that SiC GCBT has superior static characteristics, including a higher breakdown voltage, a relatively smaller threshold voltage (2.98V) and lower on-state voltage drop, and a much larger on-state current which is 28% higher than that of Si IGBT and 71% higher than that of SiC IGBT. In terms of dynamic characteristics, SiC GCBT has the shortest turn-on time, and the turn-off characteristics of the device are also improved compared with SiC and Si IGBT.

中文翻译：

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新型SiC栅控双极场效应复合晶体管动静态特性仿真研究

在本文中，提出并研究了一种称为 SiC GCBT（碳化硅栅极控制的双极场效应复合晶体管）的新型双极场效应复合功率晶体管。该结构的特点是采用基栅短接方式，而不是碳化硅垂直双扩散MOSFET（VDMOS）中传统的基极短接方式。发现该器件可以明显改善SiC绝缘栅双极晶体管（IGBT）由p型衬底引起的诸多问题，消除闩锁效应，在大功率和低频应用中具有非常广阔的前景。详细研究了SiC GCBT的动态和静态特性，并与SiC VDMOS、SiC IGBT和Si IGBT进行了比较。通过比较研究，分析结果表明，SiC GCBT 具有优异的静态特性，包括更高的击穿电压、相对较小的阈值电压（2.98V）和较低的通态压降，以及比 GCBT 高 28% 的更大的通态电流Si IGBT，比 SiC IGBT 高 71%。在动态特性方面，SiC GCBT 的导通时间最短，器件的关断特性也较 SiC 和 Si IGBT 有所提高。