The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capabilities. The anode short MCT (AS-MCT) is distinguished from the conventional MCT by an anode-short structure, which forms an extracting path for the leakage current at the gate-ground and develops a normally-off characteristic. The AS-MCTs are ideal switches for pulse discharge application. As a composite structure made of metal-oxide-silicon and bipolar junction transistors, AS-MCT is susceptible to ionization damage. This work reports the experimental results for the degradation of zero-load (or short) pulse discharge circuit characteristics induced by the ionization damage of its AS-MCT switch following cobalt- $60~\gamma $ -ray dose up to 9160 Gy(SiO₂). The radiation-induced leakage current in AS-MCT accounts for the degradations of charging time and peak surging current of the pulse discharge circuit. These degradations show a “tick”-like dependence on the $\gamma $ -ray dose which are recoverable after high dose exposures, thousands of Gy(SiO₂). From device and circuit physics perspectives, the damages on pulse discharge circuit are modelled, and then, this article proposes, the mechanism behind the characteristics degradation of pulse discharge circuit from the total ionization dose damage of AS-MCT switch.

中文翻译：

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阳极短路MOS可控晶闸管开关脉冲放电电路的电离损伤效应

MOS 控制晶闸管 (MCT) 的特点是 MOS 门控、高电流上升率和高阻断能力。阳极短路MCT（AS-MCT）与传统MCT的区别在于阳极短路结构，它形成了栅极-接地漏电流的提取路径，并具有常关特性。AS-MCT 是脉冲放电应用的理想开关。AS-MCT作为金属-氧化物-硅和双极结型晶体管的复合结构，容易受到电离损伤。这项工作报告了由其 AS-MCT 开关在钴之后的电离损坏引起的零负载（或短）脉冲放电电路特性退化的实验结果。 $60~\gamma $ -射线剂量高达 9160 Gy(SiO ₂ )。AS-MCT 中的辐射感应漏电流解释了脉冲放电电路的充电时间和峰值浪涌电流的退化。这些退化表现出对 $\伽马$ 高剂量照射后可恢复的 - 射线剂量，数千 Gy(SiO ₂ )。从器件和电路物理的角度对脉冲放电电路的损伤进行建模，然后从AS-MCT开关的总电离剂量损伤出发，提出脉冲放电电路特性劣化的机理。