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Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors
Small ( IF 13.0 ) Pub Date : 2020-11-03 , DOI: 10.1002/smll.202003397
Kaimin Xu 1 , Wenjia Zhou 1 , Zhijun Ning 1
Affiliation  

Colloidal quantum dots (CQDs) are emerging as promising materials for the next generation infrared (IR) photodetectors, due to their easy solution processing, low cost manufacturing, size‐tunable optoelectronic properties, and flexibility. Tremendous efforts including material engineering and device structure manipulation have been made to improve the performance of the photodetectors based on CQDs. In recent years, benefiting from the facial integration with materials such as 2D structure, perovskite and silicon, as well as device engineering, the performance of CQD IR photodetectors have been developing rapidly. On the other hand, to prompt the application of CQD IR photodetectors, scalable device structures that are compatible with commercial systems are developed. Herein, recent advances of CQD based IR photodetectors are summarized, especially material integration, device engineering, and scalable device structures.

中文翻译:

高性能和可扩展量子点红外光电探测器的集成结构和设备工程

胶体量子点(CQD)由于其易于解决的工艺,低成本的制造,可调节尺寸的光电特性和灵活性,正在成为下一代红外(IR)光电探测器的有前途的材料。为了改善基于CQD的光电检测器的性能,已经进行了包括材料工程和设备结构操纵在内的大量工作。近年来,受益于与2D结构,钙钛矿和硅等材料的面部整合以及设备工程,CQD红外光电探测器的性能得到了快速发展。另一方面,为了促进CQD IR光电检测器的应用,开发了与商业系统兼容的可扩展设备结构。本文总结了基于CQD的红外光电探测器的最新进展,
更新日期:2020-11-27
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