Abstract The asymmetric potential profiles are of great interest from the nonlinear optical properties point of view for semiconductor devices. The reason for this statement is because the existing theories on nonlinear optical properties obviously depends on the dipole matrix element for the involved transitions and an complete characterization for asymmetric potential profiles enables to the semiconductor device designers to have possible ranges of implementation and because the dipole matrix elements strongly depends on the asymmetry of the potential profile. Once the potential profile is well defined, with the desired range on operation, the external factors play also an important role on the optical properties tuning. In particular, in this paper we reported the absorption coefficient and the relative refractive index changes for semi-infinite inverse Gaussian-like profile for an AlxGa1−xAs/GaAs quantum well when is subjected to a z-directed electric field, to an in-plane x-directed magnetic field and finally to a non-resonant intense laser field effect, being the Al concentration the parameter that allows to shape the potential profile. In general, we conclude that the external factor are an efficient way to tune the optical properties that are in the range of the THz spectrum, at least for the intersubband transitions reported here.

中文翻译：

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外加场对半无限不对称 Al Ga1-As/GaAs 量子阱非线性光学特性的影响

摘要 从半导体器件的非线性光学特性的角度来看，非对称电位分布非常有趣。这种说法的原因是因为现有的关于非线性光学特性的理论显然取决于所涉及跃迁的偶极矩阵元素和非对称电位分布的完整表征使半导体器件设计人员能够有可能的实现范围，因为偶极矩阵元素在很大程度上取决于电位分布的不对称性。一旦明确定义了电位分布，并具有所需的操作范围，外部因素也会对光学特性调整发挥重要作用。特别是，在本文中，我们报告了 AlxGa1−xAs/GaAs 量子阱的半无限逆高斯分布的吸收系数和相对折射率变化，当受到 z 向电场时，平面内 x-定向磁场，最后到非共振强激光场效应，铝浓度是允许塑造电位分布的参数。总的来说，我们得出的结论是，外部因素是调整太赫兹光谱范围内光学特性的有效方法，至少对于此处报告的子带间跃迁而言是这样。铝浓度是允许塑造电位分布的参数。总的来说，我们得出的结论是，外部因素是调整太赫兹光谱范围内光学特性的有效方法，至少对于此处报告的子带间跃迁而言是这样。铝浓度是允许塑造电位分布的参数。总的来说，我们得出的结论是，外部因素是调整太赫兹光谱范围内光学特性的有效方法，至少对于此处报告的子带间跃迁而言是这样。