Resistive random-access memory (RRAM) structured in crossbar arrays typically use selectors to improve noise margins by suppressing sneak path currents and leakages. Without selectors, crossbar array dimensions would be prohibitively small for practical use in storage-class memory (SCM), and compute-in-memory (CIM) applications. Most one-selector one-resistor (1S1R) memory cells fabricate the selector and RRAM independently. Here, an extremely simple process is presented to construct a 1S1R cell consisting of a metal-insulator-metal (MIM) structure of V/ITO(O₂)/TiN, where the unique electrical properties of vanadium form a built-in selector. High vertical stacking density is achieved by removing the need for a separate series-connected selector. Threshold switching (TS) based on metal-insulator transition (MIT) in the vanadium top electrode (TE) selector is observed with a subthreshold swing of under 30 mV/dec. The selector is directly integrated with indium tin oxide (ITO) which provides low-voltage/high-speed resistive switching behavior (set process of <30 ns, reset of <50 ns). The use of ITO as a low-k switching layer is expected to concentrate electric fields which forms narrow conduction pathways, resulting in low forming voltages, fast switching speeds, and inherent current suppression when acting as a selector.

纵横制阵列中的电阻式随机存取存储器（RRAM）通常使用选择器，通过抑制潜行电流和泄漏来提高噪声容限。如果没有选择器，则在存储类内存（SCM）和内存计算（CIM）应用程序中实际使用时，交叉开关阵列的尺寸将非常小。大多数一选一单电阻（1S1R）存储单元独立制造选择器和RRAM。在这里，提出了一种非常简单的过程来构造由V / ITO（O ₂）的金属-绝缘体-金属（MIM）结构组成的1S1R电池）/ TiN，其中钒的独特电性能形成内置选择器。通过消除对单独的串联选择器的需求，可以实现较高的垂直堆叠密度。在低于30 mV / dec的亚阈值摆幅下，观察到基于钒上电极（TE）选择器中金属-绝缘体转变（MIT）的阈值切换（TS）。该选择器直接与铟锡氧化物（ITO）集成在一起，可提供低电压/高速阻性开关行为（设置过程<30 ns，复位时间<50 ns）。期望将ITO用作低k开关层会集中形成狭窄导电路径的电场，从而在形成选择器时会降低形成电压，加快开关速度并抑制固有电流。