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Dependence of the Electrophysical Characteristics of Metal–Ferroelectric–Semiconductor Structures on the Field-Electrode Material
Semiconductors ( IF 0.6 ) Pub Date : 2020-11-02 , DOI: 10.1134/s1063782620110032
M. S. Afanasiev , D. A. Belorusov , D. A. Kiselev , A. A. Sivov , G. V. Chucheva

Abstract

Films of the composition Ba0.8Sr0.2TiO3 (BST 80/20) are synthesized on a silicon substrate by the method of the high-frequency sputtering of a polycrystalline target. The results of investigations of the film composition, the electrophysical properties of capacitor structures based on them, and the dependence of these properties on the material (Al, Cu, Ni, Cr) of the upper electrode are presented.



中文翻译:

金属-铁电-半导体结构的电物理特性对场电极材料的依赖性

摘要

通过高频溅射多晶靶的方法,在硅基板上合成组成为Ba 0.8 Sr 0.2 TiO 3(BST 80/20)的膜。给出了薄膜组成,基于它们的电容器结构的电物理特性以及这些特性对上电极材料(Al,Cu,Ni,Cr)的依赖性的研究结果。

更新日期:2020-11-03
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