Abstract

The results of a study into the effect of irradiation with heavy Ar ions on the structural and optical characteristics of 4H-SiC are presented. It is shown that even upon single-time irradiation with 53-MeV Ar ions at a fluence of 1 × 10¹⁰ cm^–2 there are at least two powerful local regions with negative deformation dominant in the structure of silicon carbide. Also, a region with positive deformation is observed in the structure. The formation of localized clusters with negative and positive deformations along with the undisturbed matrix gives rise to linear-type defects that partially relieve stresses in the structure. It is assumed that, upon irradiation with Ar ions, the resulting complex defect structure provides the effect of point-defect gettering and leads to a quantum efficiency of 4H-SiC UV photodetectors that is comparable with that of the initial samples.

中文翻译：

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氩离子辐照的4 H -SiC紫外探测器的结构和光学特性

摘要

提出了重Ar离子辐照对4 H -SiC结构和光学特性影响的研究结果。结果表明，即使以53MeV的Ar离子单次辐照，通量为1×10 ¹⁰ cm ^–2在碳化硅的结构中，至少有两个强大的局部区域具有负的变形。另外，在结构中观察到具有正变形的区域。具有正和负变形的局部簇以及未受扰动的基体的形成会引起线性型缺陷，从而部分缓解结构中的应力。假定在用Ar离子辐照时，所得的复杂缺陷结构提供了点缺陷吸杂的效果，并导致了与初始样品相当的4 H -SiC UV光电探测器的量子效率。