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Modeling of Exciton Exchange Interaction in GaAs/AlGaAs Quantum Wells
Semiconductors ( IF 0.6 ) Pub Date : 2020-11-02 , DOI: 10.1134/s1063782620110135
E. S. Khramtsov , B. F. Gribakin , A. V. Trifonov , I. V. Ignatiev

Abstract

In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schrödinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 μeV for an exciton density of 1/μm2.



中文翻译:

GaAs / AlGaAs量子阱中激子交换相互作用的建模

摘要

在这项工作中,我们研究了不同宽度的GaAs / AlGaAs量子阱中两个激子之间的交换相互作用。我们用数值方法求解了量子阱中激子的薛定ding方程,从而找到了两个激子波函数并计算了交换积分。结果表明,激子之间的相互作用最强发生在约40-50纳米宽度的量子阱,与1 /μm的激子密度约9μeV的交换能量为2

更新日期:2020-11-03
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