Abstract

Physics-based two-dimensional numerical simulations are performed to analyze the device characteristics of tri-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistor (OTFT) fabricated using drop-casting technique. Further, using simulation technique enabling calibration this paper also presents the systematic study of the impact of active layer (TIPS-pentacene) thickness on device characteristics. The extracted parameters such as electric field intensity, current density, current On/Off ratio, and mobility exhibit variation with scaling down in active layer thickness from 500 to 100 nm. The study also revealed that Off current and On/Off current ratio (I_On/I_Off) is highly dependent on the thickness of the semiconductor layer. Furthermore, the highest value of I_On/I_Off is obtained at 100-nm thickness of TIPS-pentacene, which can be used for various fast-switching applications in digital circuits. Simulated results are not only reasonably matching with experimental results but also provide insight on charge transportation at the semiconductor-dielectric interface and in the bulk of TIPS-pentacene layer.

中文翻译：

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有机薄膜晶体管在半导体材料不同厚度下的性能研究：经过实验验证的模拟研究

摘要

进行了基于物理的二维数值模拟，以分析使用滴铸技术制造的三异丙基甲硅烷基乙炔基（TIPS）-并五苯有机薄膜晶体管（OTFT）的器件特性。此外，使用能够进行校准的仿真技术，本文还介绍了有源层（TIPS-并五苯）厚度对器件特性的影响的系统研究。所提取的参数（例如，电场强度，电流密度，电流开/关比和迁移率）随活性层厚度从500 nm缩小到100 nm而变化。研究还显示，关断电流与开/关电流比（I_开/ I_关高度依赖于半导体层的厚度。此外，在100纳米厚的TIPS-并五苯中可获得最高的I _On / I _Off值，该值可用于数字电路中的各种快速切换应用。模拟结果不仅与实验结果合理匹配，而且还提供了有关在半导体-电介质界面以及大部分TIPS-并五苯层中电荷传输的见解。