The optimum and acceptable combination of control gate (CG) process parameters, such as dielectric materials, thickness, and metal work function for a double-gate junctionless tunnel field-effect transistor, remain a subject of great interest among researchers. We report here on the significant impact of CG process variations on the radio-frequency (RF) parameters of this device structure. Studies carried out using a non-quasi-static model with CG process variations have been analyzed for current gain (h₂₁) and unilateral power gain with the help of a Silvaco Atlas device simulator. Systematic investigations reveal that the combination of CG process parameters, such as dielectric material (SiO₂) with the thickness of 2 nm and CG metal (aluminum-〈100〉), provide the optimum RF characteristics, i.e., f_T (2.9 GHz) and f_max (15 GHz), while maintaining the switching ratio (0.161 × 10⁹), intrinsic capacitances (C_gg = 0.7 fF), and transconductance (3.8 μS) at the bias conditions of V_gs (1 V) and V_ds (1 V). The results have been thoroughly interpreted from energy band diagrams and the associated band-to-band tunneling rate. The studies reported here may prove to be useful for further exploring the use of the suggested device structure for Internet of Everything communications and other related applications.

控制栅（CG）工艺参数（例如介电材料，厚度和双栅无结隧道场效应晶体管的金属功函数）的最佳和可接受组合仍然是研究人员关注的主题。我们在这里报告了CG工艺变化对该设备结构的射频（RF）参数的重大影响。借助Silvaco Atlas设备模拟器，对使用非准静态模型和CG工艺变化进行的研究分析了电流增益（h ₂₁）和单边功率增益。系统研究表明，CG工艺参数的组合，例如介电材料（SiO ₂）的厚度为2 nm，并且使用CG金属（铝-<100>），可提供最佳的RF特性，即f _T（2.9 GHz）和f _max（15 GHz），同时保持开关比（0.161×10 ⁹），固有电容（C _gg  = 0.7 fF）和跨导（3.8μS）在V _gs（1 V）和V _ds（1 V）的偏置条件下进行。结果已经从能带图和相关的带间隧穿速率中得到了充分的解释。此处报告的研究可能被证明对于进一步探索建议的设备结构在万物互联通信和其他相关应用程序中的使用很有用。