A mathematical model for deep ion implantation depth profiling by synchrotron radiation grazing-incidence X-ray fluorescence spectrometry,Journal of Analytical Atomic Spectrometry

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A mathematical model for deep ion implantation depth profiling by synchrotron radiation grazing-incidence X-ray fluorescence spectrometry
Journal of Analytical Atomic Spectrometry ( IF 3.1 ) Pub Date : 2020-10-26 , DOI: 10.1039/d0ja00346h
Mateusz Czyzycki _{1,

2,

3,

4,

5} , Mike Kokkoris _{6,

7,

8,

9} , Andreas-Germanos Karydas _{9,

10,

11,

12,

13}

Affiliation

Synchrotron based grazing incidence X-ray fluorescence (GIXRF) spectrometry is usually applied to obtain shallow depth distributions (less than 25 nm) using information from the X-ray standing wave (XSW). In this paper a new XSW-free mathematical model is proposed that allows the quantitative derivation of much deeper depth distributions. The model was validated with three test Si(111) wafers deeply implanted with 200 keV argon ions of nominal doses of 10¹⁵ to 10¹⁶ at. per cm². Ar ion retained doses determined with our XSW-free GIXRF model agreed well with nominal quantities, additionally cross-checked by ion beam analysis (IBA) techniques. Deduced depth profiles of Ar ions are critically discussed in comparison with the Monte Carlo simulation of Ar ion transport in amorphous silicon. The developed model provides a robust quantification GIXRF methodology to study deeply implanted dopants in semiconductors, expanding the applicability of GIXRF spectrometry in new fields with emerging technological interest.

中文翻译：

同步加速器辐射掠射入射X射线荧光光谱法进行深离子注入深度分析的数学模型

基于同步加速器的掠入射X射线荧光（GIXRF）光谱通常用于使用X射线驻波（XSW）的信息获得浅深度分布（小于25 nm）。在本文中，提出了一种新的无XSW的数学模型，该模型允许对更深的深度分布进行定量推导。该模型通过深注入200 keV氩离子标称剂量为10 ¹⁵至10 ¹⁶ at的200 keV氩离子的三个测试Si（111）晶圆进行了验证。每厘米²。使用我们的无XSW的GIXRF模型确定的Ar离子保留剂量与标称量非常吻合，此外还通过离子束分析（IBA）技术进行了交叉检查。与非晶硅中Ar离子迁移的蒙特卡洛模拟比较，对讨论得出的Ar离子深度分布进行了严格讨论。开发的模型提供了鲁棒的定量GIXRF方法，用于研究半导体中的深层注入掺杂剂，从而随着新兴的技术兴趣，扩大了GIXRF光谱学在新领域中的适用性。

更新日期：2020-11-03

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