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High-k Boron Nitride Sheets/Polyimide Hybrid Dielectric Layers for the Fabrication of Flexible Organic Transistors on Commercial Graphite Paper
Nano ( IF 1.0 ) Pub Date : 2020-09-23 , DOI: 10.1142/s1793292020501453
Miao Zhu 1 , Xiaoyun Wei 2 , Jupeng Cao 2 , Wei Xie 1 , Changwei Zou 1 , Yanxiong Xiang 1 , Hong Meng 2
Affiliation  

Organic transistors are crucial components in future flexible electronics due to their excellent properties and ease of circuit integration. Previously, we demonstrated that flexible organic (polyimide) thermal transistors could be prepared using commercial graphite paper as the substrate. These materials exhibited excellent temperature sensitivity, linearity and recoverability due to the intrinsically high thermal conductivity of graphite. In this study, boron nitride (BN) sheets/polyimide hybrid dielectric layers were synthesized for the fabrication of flexible organic transistors using a commercial graphite paper. Under test, the results showed that the introduction of BN sheets was beneficial in improving the mobility and transistor characteristics of the device, as well as enhancing the overall stability. The as-fabricated transistors virtually exhibited no hysteresis at all BN contents.

中文翻译:

用于在商业石墨纸上制造柔性有机晶体管的高 k 氮化硼片/聚酰亚胺混合介电层

有机晶体管因其优异的性能和易于电路集成而成为未来柔性电子产品中的关键元件。以前,我们证明了可以使用商业石墨纸作为基板制备柔性有机(聚酰亚胺)热晶体管。由于石墨固有的高导热性,这些材料表现出优异的温度敏感性、线性和可恢复性。在这项研究中,合成了氮化硼(BN)片/聚酰亚胺混合介电层,用于使用商业石墨纸制造柔性有机晶体管。在测试中,结果表明BN片的引入有利于提高器件的迁移率和晶体管特性,以及提高整体稳定性。
更新日期:2020-09-23
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