We report on the relationship between carrier lifetime degradation of floating-zone silicon (FZ Si) and the guard ring formation process for silicon integrated gate bipolar transistor (Si-IGBT). A clear carrier lifetime degradation was observed through the guard ring oxidation and annealing processes for Si-IGBT and showed interstitial oxygen (O_i) concentration dependence, which was obtained by Fourier transform infrared absorption spectroscopy. Based on the carrier lifetime measurements through the step etching of the FZ Si substrate, it has been suggested that the carrier lifetime degradation is not only caused by the O_i itself near the FZ Si surface region but also the other defects induced by the O_i injection. Diffused interstitial Si atoms kicked-out by the O_i into the FZ Si substrate, which has a longer diffusion length than O_i, can be considered to be the origin of the carrier lifetime degradation.

我们报告了浮区硅（FZ Si）的载流子寿命退化与硅集成栅双极晶体管（Si-IGBT）的保护环形成过程之间的关系。通过Si-IGBT的保护环氧化和退火工艺观察到了明显的载流子寿命降低，并显示出间隙氧（O _i）浓度依赖性，这是通过傅立叶变换红外吸收光谱法获得的。基于通过对FZ Si衬底进行阶梯刻蚀进行的载流子寿命测量，表明载流子寿命下降不仅由FZ Si表面区域附近的O _i本身引起，而且还由O _i引起的其他缺陷引起注射。O _i驱散到FZ Si衬底中的扩散间隙Si原子具有比O _i更长的扩散长度，可以认为是载流子寿命下降的原因。