The uniformity of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) over a large scale is an important element in their application. Characteristics of poly-Si thin films are the key factors influencing the performance of TFTs. In this area, we developed void-free (100)-surface oriented poly-Si thin films over large areas using multiline beam continuous-wave laser lateral crystallization (MLB-CLC) with overlapping scanning. Predominantly (100)-surface oriented poly-Si thin films are formed over large areas with the laser power from 5to 8W. (100), and random, or (211)-surface orientations can be selected by varying the laser power and scanning speed. In addition, characterization of these selectively oriented poly-Si thin films is analyzed using two-dimensional X-ray diffraction and hard X-ray photoelectron spectroscopy.

多晶硅（poly-Si）薄膜晶体管（TFTs）的大规模均匀性是其应用中的重要因素。多晶硅薄膜的特性是影响TFT性能的关键因素。在这一领域，我们使用重叠扫描的多线束连续波激光横向结晶（MLB-CLC）技术在大面积上开发了无空隙（100）表面取向的多晶硅薄膜。在5至8W的激光功率下，主要是在大面积上形成（100）表面取向的多晶硅薄膜。可以通过改变激光功率和扫描速度来选择（100），随机或（211）表面方向。另外，使用二维X射线衍射和硬X射线光电子能谱分析这些选择性取向的多晶硅薄膜的特性。