In recent years, the organic-inorganic perovskite materials have revolutionized the Photovoltaic industry with highly efficient power conversion devices accompanied by a high growth rate. However, these devices experience major environmental and stability issues that hinder their true potential. More recently, a rarely studied perovskite material Cs₂SnI₆ is gaining enormous attention due to its superior stability and suitable bandgap. In this work, we developed a modified two-step process to prepare uniform Cs₂SnI₆ films, and the influence of the reaction conditions on the properties is explored. The structural, morphological, optical, and electrical properties of the prepared films were investigated using x-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV–vis spectrometer, photoluminescence, and Hall Effect measurements, respectively. Phase stability and morphology of the films are improved with optimizing the reaction conditions. The results confirm the n-type semiconductor nature of Cs₂SnI₆ with bandgap ranging from 1.29 eV to 1.42 eV with maximum carrier mobility of 425 cm² V⁻¹ s⁻¹. The present study will further provide potential research directions in improving the device efficiency of air-stable Cs₂SnI₆ perovskite solar cells.

近年来，有机-无机钙钛矿材料以高效的功率转换装置以及高增长率实现了光伏行业的革命。但是，这些设备会遇到严重的环境和稳定性问题，从而阻碍了它们的真正潜力。最近，由于其优异的稳定性和合适的带隙，很少研究的钙钛矿材料Cs ₂ SnI ₆得到了极大的关注。在这项工作中，我们开发了一种改进的两步法来制备均匀的Cs ₂ SnI ₆膜，并探讨了反应条件对性能的影响。分别使用x射线衍射，拉曼光谱，扫描电子显微镜，紫外可见光谱仪，光致发光和霍尔效应测量研究了所制备薄膜的结构，形态，光学和电学性质。优化反应条件可以改善薄膜的相稳定性和形貌。结果证实了Cs ₂ SnI ₆的n型半导体性质，带隙范围为1.29 eV至1.42 eV，最大载流子迁移率为425 cm ² V ^-1 s ^-1。本研究将进一步为提高空气稳定性Cs ₂ SnI ₆钙钛矿型太阳能电池的器件效率提供潜在的研究方向。