The atomic‐thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible‐blind wavelengths. Here, a simple and nontoxic surfactant‐assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water‐soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 10⁴ A W⁻¹) and detectivity (D* = 6.83 × 10¹⁴ Jones) at a visible‐blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τ_R = 3.97 s, τ_D = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep‐UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high‐performance optoelectronic devices.

中文翻译：

---

用于可见光盲紫外光检测的原子薄ZnO片

原子级薄的2D半导体已经成为未来光电子学的合理候选者，它们在缩放过程方面具有更高的性能。但是，目前报道的2D光电探测器在紫外线尤其是可见盲波长上仍存在巨大缺陷。在此，据报道，一种简单且无毒的表面活性剂辅助合成策略可控制地生长尺寸为3至30 µm的原子薄（1.5至4 nm）ZnO纳米片。得益于碳链短和十二烷基硫酸钠（SDS）的水溶性，合成的ZnO纳米片具有较高的晶体质量和清洁的表面，从而与传统的微制造技术具有良好的相容性，并对紫外线具有很高的敏感性。用ZnO构造的光电探测器显示出最高的响应度（高达2.0×10⁴ AW ^-1）和探测（d * = 6.83×10 ¹⁴琼斯）在254nm的可见-不可见波长，光响应速度由400℃退火处理优化（τ _{- [R}  = 3.97 S，τ _d  = 5.32 s），因此2D ZnO可以作为有前途的材料来填补深紫外光电检测的空白。此处开发的方法为可控制地合成2D非分层材料开辟了一条新途径，并加速了它们在高性能光电设备中的应用。