Surface emitting distributed feedback (SE-DFB) semiconductor laser has become one of study hotspots due to its narrow linewidth and high power. Herein, a SE-DFB semiconductor laser is proposed based on second-order Bragg grating for feedback and out-coupling. The grating is fabricated on the confinement layer, which can realize the laser emission from the substrate and avoid the secondary epitaxial growth. The asymmetric waveguide structure is introduced into the device to increase the probability of photon and grating interaction while reducing the threshold current. The results show that when the current is 3A, the output laser power from the substrate achieves 1.22 W. In the meantime, the threshold current, voltage and slope efficiency are 300 mA, 1.73 V and 0.45 W/A, respectively. The center wavelength is 980.1 nm and the linewidth is 0.84 nm. This work has important implications for low threshold current narrow linewidth SE-DFB semiconductor lasers.

表面发射分布式反馈（SE-DFB）半导体激光器由于其窄的线宽和高功率而已成为研究热点之一。在此，提出了一种基于二阶布拉格光栅的SE-DFB半导体激光器，用于反馈和输出耦合。光栅制作在限制层上，可以实现从基板发射激光，避免二次外延生长。非对称波导结构被引入器件中，以增加光子与光栅相互作用的可能性，同时降低阈值电流。结果表明，当电流为3A时，从基板输出的激光功率达到1.22W。同时，阈值电流，电压和斜率效率分别为300 mA，1.73 V和0.45 W / A。中心波长为980.1 nm，线宽为0.84 nm。