Abstract The aim of this work is to study the degradation processes in high power InGaN semiconductor lasers, by means of electrical, optical, spectral and capacitance deep-level transient spectroscopy measurements. The devices were submitted to two different stress experiments, (i) a constant current stress at 1.5 A and 45 °C, and (ii) a temperature/bias step stress at 1 A and increasing temperature. Results demonstrated: (i) two different mechanisms that change the drive voltage, one due to the activation of Mg and one ascribed to the generation of point defects; (ii) a parasitic peak is present in the emission spectra, ascribed to the recombination in a second quantum well (QW); (iii) redistribution of charge takes place during the temperature step stress.

中文翻译：

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通过电学、光学、光谱和 C-DLTS 测量研究高功率 InGaN 半导体激光器的退化机制

摘要 这项工作的目的是通过电、光、光谱和电容深能级瞬态光谱测量来研究高功率 InGaN 半导体激光器的退化过程。这些器件接受了两个不同的应力实验，(i) 1.5 A 和 45 °C 下的恒定电流应力，以及 (ii) 1 A 和温度升高时的温度/偏置阶跃应力。结果表明：(i) 改变驱动电压的两种不同机制，一种是由于 Mg 的活化，另一种是由于点缺陷的产生；(ii) 发射光谱中存在寄生峰，归因于第二量子阱 (QW) 中的复合；(iii) 在温度阶跃应力期间发生电荷的重新分布。