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Physical properties of Pb-doped CuS nanostructures for optoelectronic applications
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2021-03-01 , DOI: 10.1016/j.mssp.2020.105501
Reza Zeinodin , Farid Jamali-Sheini , Mohsen Cheraghizade

Abstract The present study was conducted to investigate the effects of different concentrations of lead (Pb) atoms on the physical properties of copper sulfide (CuS) nanostructures for optoelectronic applications. CuS nanostructures were grown using sonochemical method. The X-ray diffraction (XRD) patterns indicated polycrystalline phase formation of hexagonal CuS; therefore calculations through different methods demonstrated the increase in crystallite sizes with the addition of Pb concentrations. Field emission scanning electron microscopy (FESEM) images also revealed the growth of disk-like structures in nanometer dimensions, whose average size decreased by adding dopants. Optical analysis also showed an increase in the absorption and emission intensity of the doped samples compared to the un-doped sample. Photocatalytic degradation experiments for methyl orange (MO) pigments and electrical tests also showed improved optoelectronic performance of CuS nanostructures in the presence of Pb atoms in its structure. The current-voltage result was also plotted at different temperatures; it changed from nonlinear at low temperatures to linear at high temperatures. In addition, optoelectronic characterization implied the thermal dependence of the optoelectronics properties of CuS nanostructures to crystalline defects CuS. Ultimately, the hydrophilicity and hydrophobicity of un- and Pb-doped nanostructures were also investigated.

中文翻译:

用于光电应用的 Pb 掺杂 CuS 纳米结构的物理性质

摘要 本研究旨在研究不同浓度的铅 (Pb) 原子对用于光电应用的硫化铜 (CuS) 纳米结构的物理性质的影响。CuS 纳米结构使用声化学方法生长。X 射线衍射 (XRD) 图案表明六方 CuS 的多晶相形成;因此,通过不同方法的计算表明,随着 Pb 浓度的增加,微晶尺寸会增加。场发射扫描电子显微镜 (FESEM) 图像还揭示了纳米尺寸的盘状结构的生长,其平均尺寸通过添加掺杂剂而减小。光学分析还表明,与未掺杂的样品相比,掺杂的样品的吸收和发射强度有所增加。甲基橙 (MO) 颜料的光催化降解实验和电学测试也表明,在其结构中存在 Pb 原子的情况下,CuS 纳米结构的光电性能得到改善。电流-电压结果也在不同温度下绘制;它从低温时的非线性变为高温时的线性。此外,光电表征暗示了 CuS 纳米结构的光电特性对晶体缺陷 CuS 的热依赖性。最后,还研究了未掺杂和 Pb 掺杂的纳米结构的亲水性和疏水性。电流-电压结果也在不同温度下绘制;它从低温时的非线性变为高温时的线性。此外,光电表征暗示了 CuS 纳米结构的光电特性对晶体缺陷 CuS 的热依赖性。最后,还研究了未掺杂和 Pb 掺杂的纳米结构的亲水性和疏水性。电流-电压结果也在不同温度下绘制;它从低温时的非线性变为高温时的线性。此外,光电表征暗示了 CuS 纳米结构的光电特性对晶体缺陷 CuS 的热依赖性。最后,还研究了未掺杂和 Pb 掺杂的纳米结构的亲水性和疏水性。
更新日期:2021-03-01
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