Indium gallium zinc oxide (IGZO) thin films with various tin (Sn) substitution contents were prepared on the glass substrate by using sol-gel spin coating. After Sn-doped IGZO precursor coatings were calcined at 550°C for 1 hr, the optical and electrical properties of IGZO thin films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible spectroscopy (UV-Vis), Hall effect measurement, and X-ray photoelectron spectroscopy (XPS). With the chemical route, the film composition in the form of InGa(Zn_1-xSn_x)O₄ (Sn-x-IGZO) can be well controlled to study the effect of Sn substitution. The results showed that all Sn-IGZO thin films were amorphous, had optical transmittance above 86%, and band-gap of 3.60-3.73 eV. The Sn-0.1-IGZO films with 89% optical transmittance had a carrier concentration of 3.48×10¹⁵ cm^-3, mobility of 65 cm²/V•s, and electrical conductivity of 4.30×10^-2 S/cm, where there was the 15-fold increase in mobility and 2,100-fold increase in conductivity, as compared to the undoped IGZO. A well consistent defect mechanism is proposed to explain the contradiction for more oxygen vacancies at higher Sn⁴⁺ content in equations.

通过使用溶胶-凝胶旋涂法在玻璃基板上制备具有各种锡（Sn）取代含量的铟镓锌氧化物（IGZO）薄膜。掺锡的IGZO前驱体涂层在550°C下煅烧1小时后，通过X射线衍射（XRD），场发射扫描电子显微镜（FESEM），紫外可见光谱对IGZO薄膜的光学和电学性质进行表征。 （UV-Vis），霍尔效应测量和X射线光电子能谱（XPS）。通过化学途径，以InGa（Zn _{1- x} Sn _x）O ₄（Sn- x-IGZO）可以很好地控制以研究Sn取代的影响。结果表明，所有Sn-IGZO薄膜均为非晶态，透光率大于86％，带隙为3.60-3.73 eV。具有89％光学透射率的Sn-0.1-IGZO薄膜的载流子浓度为3.48×10 ¹⁵ cm ^-3，迁移率为65 cm ² / V•s，电导率为4.30×10 ^-2 S / cm。与未掺杂的IGZO相比，迁移率提高了15倍，电导率提高了2,100倍。提出了一个很好的一致性缺陷机理来解释方程中较高的Sn ⁴⁺含量导致更多的氧空位的矛盾。