Abstract CdS nanowire array on foil has been fabricated through a solvothermal method, which is uniform, regular and approximately perpendicular to the Cd foil. With the variation of sulfur precursor concentration, the relative intensity of (100), (002) and (101) peak are variable. The nanostructured CdS show the preferential (002)-orientation growth. At the sulfur concentration of 0.1 mol/l, 0.2 mol/l and 0.3 mol/l, CdS nanowires are approximately perpendicular to the Cd foil. At the high sulfur concentration, the characterization of array is destroyed. The band gap, which are estimated from the absorptance spectra using the Kubelka-Munk method, increase with the increasing sulfur precursor concentration until the concentration reaches up to 0.4 mol/l and no longer increases. It is very important to understand the relation between the experimental parameters and the physical properties of the CdS nanowires.

中文翻译：

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硫前驱体浓度对溶剂热法Cd箔上CdS纳米线阵列结构和光学性能的影响

摘要 通过溶剂热法在箔上制备了 CdS 纳米线阵列，该阵列均匀、规则并近似垂直于 Cd 箔。随着硫前驱体浓度的变化，(100)、(002)和(101)峰的相对强度是可变的。纳米结构的 CdS 显示出优先的 (002) 取向生长。在硫浓度为 0.1 mol/l、0.2 mol/l 和 0.3 mol/l 时，CdS 纳米线近似垂直于 Cd 箔。在高硫浓度下，阵列的表征被破坏。使用 Kubelka-Munk 方法从吸收光谱估计的带隙随着硫前体浓度的增加而增加，直到浓度达到 0.4 mol/l 并且不再增加。