Abstract In this work, we present the performance improved InGaZnO thin film transistors by inserting low temperature processed 10 nm thick SiOCH buffer layers between SiNx insulator and InGaZnO channel layer. The influences of oxygen flow rate during the deposition of SiOCH buffer layer have been intensively investigated. Basing on the analysis of hall effect measurement and Fourier transform infrared spectrum, the SiOCH buffer layer can effectively increase the carrier concentration of the channel layer by the hydrogen doping due to re-sputtering and diffusion effect. The InGaZnO thin film transistor with buffer layer exhibits an enhanced performance with mobility of 13.09 cm2/vs, threshold voltage of −0.55 V and Ion/Ioff over 106.

中文翻译：

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使用 HMDSO/O2 等离子体沉积 SiOCH 缓冲层改善 InGaZnO 薄膜晶体管的电特性

摘要 在这项工作中，我们通过在 SiNx 绝缘体和 InGaZnO 沟道层之间插入低温处理的 10 nm 厚的 SiOCH 缓冲层来展示性能改进的 InGaZnO 薄膜晶体管。已经深入研究了在沉积 SiOCH 缓冲层过程中氧气流速的影响。基于霍尔效应测量和傅里叶变换红外光谱分析，SiOCH缓冲层可以通过再溅射和扩散效应的氢掺杂有效提高沟道层的载流子浓度。具有缓冲层的 InGaZnO 薄膜晶体管表现出增强的性能，迁移率为 13.09 cm2/vs，阈值电压为 -0.55 V，Ion/Ioff 超过 106。