A visible light photodetector made of CsPbBr 3 thin film prepared by solution process method was fabricated using a chromium interdigital structure. The device consists of two interdigitated electrodes deposited on glass substrate with 10 μ m channel width filled with CsPbBr 3 . The material was characterized by using absorbance, μ -photoluminescence ( μ -PL), and X-ray spectroscopies. The PL peak was observed at 528 nm (2.35 eV). The detector was characterized by using the spectral response, current-voltage (I–V) characteristic, and time response measurements. The photocurrent of the device was observed to be about two orders of magnitude higher than the dark currents. The detectivity was extracted from the I–V measurements to be 2.67 × 10 9 cm Hz −2 W at 5 V bias voltage. The spectral response measured at room temperature exhibited a peak located at 518 nm, which is in good agreement with the absorbance peak. The detectivi...

中文翻译：

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具有叉指式铬电极的CsPbBr 3钙钛矿光电探测器

使用铬指叉结构制造由溶液法制备的由CsPbBr 3薄膜制成的可见光探测器。该设备由两个相互交叉的电极组成，这些电极沉积在玻璃基板上，通道宽度为10μm，并填充有CsPbBr 3。通过使用吸光度，μ-光致发光（μ-PL）和X射线光谱学对材料进行表征。在528 nm（2.35 eV）处观察到PL峰。通过使用光谱响应，电流-电压（IV）特性和时间响应测量来表征检测器。观察到器件的光电流比暗电流高大约两个数量级。从IV测量中提取出的探测率为2.67  × 在5 V偏置电压下为10 9 cm Hz -2W。在室温下测得的光谱响应显示出一个位于518 nm处的峰，该峰与吸光度峰非常吻合。侦探...