A review of models for determining the thermoelectric transport coefficients [Formula: see text] (Seebeck coefficient), [Formula: see text] (electrical conductivity), and [Formula: see text] (electronic thermal conductivity) is presented, for the cases of bulk and nanowire structures, along with derivations and a discussion of calculation methods. Results for the transport coefficients in GaAs, InAs, InP and InSb are used to determine the thermoelectric figure of merit, where an enhancement by two orders of magnitude is found for the nanowire case as compared with the bulk. The optimal electron concentration is determined as a function of nanowire diameter for both background and modulation doped nanowires.

中文翻译：

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使用玻尔兹曼传输方法模拟 III-V 纳米线中的热电传输：综述

介绍了用于确定热电传输系数的模型 [公式：参见文本]（塞贝克系数）、[公式：参见文本]（电导率）和 [公式：参见文本]（电子热导率）的模型体和纳米线结构，以及推导和计算方法的讨论。GaAs、InAs、InP 和 InSb 中传输系数的结果用于确定热电品质因数，其中发现纳米线情况与块体相比提高了两个数量级。最佳电子浓度被确定为背景和调制掺杂纳米线的纳米线直径的函数。