Ta-N thin films were prepared on glass and Al 2 O 3 substrates using high-power impulse reactive magnetron sputtering. A Ta target was used and sputtered using Ar/N 2 two gasses mixture. The phase structures, microstructures and electrical properties of Ta-N thin film with different powers and annealing temperatures were investigated. The results showed that an amorphous structure existed in the as-deposited Ta-N films at 500 W, and some crystalline phases (TaN, Ta 2 N and β -Ta) were observed in as-deposited films at 1500 W and 2500 W. The crystallization phase did not change when the annealing temperature ranged from room temperature up to 500 °C. When the sputtering power increased to 2500 W, TaN, Ta 2 N and β -Ta crystalline phases coexisted in the as-deposited films. However, Ta-N films deposited at 2500 W and annealed at 500 °C in N 2 exhibited resistivityof∼460 μ Ω-cm with −93 ppm °C −1 ...

中文翻译：

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大功率脉冲反应磁控溅射制备氧氮化钽薄膜的微观结构和电性能

使用大功率脉冲反应磁控溅射在玻璃和Al 2 O 3衬底上制备Ta-N薄膜。使用Ta靶，并使用Ar / N 2两种气体混合物进行溅射。研究了不同功率和退火温度下Ta-N薄膜的相结构，微观结构和电性能。结果表明，沉积后的Ta-N薄膜在500 W下存在非晶态结构，沉积在1500 W和2500 W下的薄膜中观察到一些晶相（TaN，Ta 2 N和β-Ta）。当退火温度在室温至最高500°C范围内时，结晶相不会改变。当溅射功率增加到2500W时，TaN，Ta 2 N和β-Ta结晶相共存于所沉积的膜中。然而，