Tunnel junctions (TJs) offer alternative designs and promise in some cases improved performances for nitride-based light-emitting diode (LEDs) and laser diodes (LDs) and are widely used in academic studies. However, the voltage penalty of the LEDs and LDs, in comparison with standard contact technologies, has been a major concern especially for commercial applications. In this study, we investigated methods to achieve low excess voltage. Using ammonia molecular beam epitaxy (NH 3 MBE), GaN TJs were grown on commercial metalorganic chemical vapor deposition (MOCVD) grown blue LED wafers. Atom probe tomography (APT) and secondary ion mass spectrometry (SIMS) indicate 1 min buffered HF (BHF) clean of the regrowth interface reduced Mg and impurity incorporation into the n++ regrown TJ layers. The wafers were processed and measured in parallel to reference wafers using both university processes and industry processes. At 20 A cm −2 , TJ LEDs grown with Si δ-doping ...

中文翻译：

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利用低过电压的混合隧道结的III型氮化物蓝色发光二极管

隧道结（TJ）提供了替代设计，并有望在某些情况下改善基于氮化物的发光二极管（LED）和激光二极管（LD）的性能，并且在学术研究中得到了广泛的应用。但是，与标准接触技术相比，LED和LD的电压损失一直是主要关注的问题，尤其是对于商业应用而言。在这项研究中，我们研究了实现低过电压的方法。使用氨分子束外延（NH 3 MBE），在商业金属有机化学气相沉积（MOCVD）生长的蓝色LED晶片上生长GaN TJ。原子探针层析成像（APT）和二次离子质谱（SIMS）表明，在1分钟的缓冲HF（BHF）中清除了再生界面，减少了Mg并掺入了n ++重生的TJ层中。使用大学过程和工业过程，与参考晶圆平行地对晶圆进行处理和测量。在20 A cm -2处，生长有Siδ掺杂的TJ LED ...