InGaZnO (IGZO) is an excellent semiconductor material for thin-film transistors (TFTs) used in direct-current and radio-frequency (RF) switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. IGZO thin films with a composition of InGaZnO 4 have been deposited and used as channel layers in TFTs for many applications to date; however, IGZO compositions can also be easily changed to vary their properties. These different compositions of IGZO may have different defect properties. In this study, we report the growth of IGZO with composition of In 2 O 3 :Ga 2 O 3 :5ZnO (In 2 Ga 2 Zn 5 O 11 ) by pulsed laser deposition (PLD) and its electronic defects studied by thermally stimulated current (TSC) spectroscopy. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and four major traps with activation energies between ∼0.16–0.50 eV ...

中文翻译：

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热激发电流光谱法研究PLD生长的IGZO（In 2 Ga 2 Zn 5 O 11）薄膜的深层缺陷及其不稳定性

InGaZnO（IGZO）是用于直流和射频（RF）开关应用中的薄膜晶体管（TFT）的出色半导体材料，特别是因为它可以在低温下在各种基板上生长。迄今为止，已经沉积了具有InGaZnO 4组成的IGZO薄膜，并将其用作TFT中的沟道层，用于许多应用。但是，IGZO组成也可以轻松更改以改变其性能。IGZO的这些不同成分可能具有不同的缺陷属性。在这项研究中，我们报告了通过脉冲激光沉积（PLD）来生长具有In 2 O 3：Ga 2 O 3：5ZnO（In 2 Ga 2 Zn 5 O 11）的IGZO及其通过热激励电流研究的电子缺陷（TSC）光谱。发现生长后的样品的直流活化能为0.62 eV，