High performance GaN-based micro-light-emitting diodes (µLEDs) with epitaxial n-InGaN/n-GaN tunnel junctions (InGaN TJs) were grown by metalorganic chemical vapor deposition (MOCVD). The InGaN TJs µLEDs show a significant reduction of forward voltage (V f ) by ∼0.6 V compared to the common TJs µLEDs. The V f at 20 A cm −2 is very low varied from 3.15 V to 3.19 V in small InGaN TJ µLEDs with a size less than 40 × 40 µ m 2 , and then significantly increases in large LEDs. Selective area growth (SAG) of TJs can overcome such size limitation by vertical out diffusion of hydrogen through the apertures on top of p-GaN. The InGaN TJ µLEDs overgrown by SAG show a size-independent low V f ranged from 3.08 V to 3.25 V. The external quantum efficiency (EQE) of the packaged TJ µLEDs was improved by 6% compared to the common µLEDs with indium tin oxide (ITO) contact. This work solves the key challenges of MOCVD-grown TJs.

中文翻译：

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金属有机化学气相沉积生长的n-InGaN / n-GaN隧道结，用于正向电压非常低的微发光二极管

通过金属有机化学气相沉积（MOCVD）来生长具有外延n-InGaN / n-GaN隧道结（InGaN TJs）的高性能GaN基微发光二极管（µLED）。与普通的TJs µLEDs相比，InGaN TJs µLEDs的正向电压（V f）降低了约0.6V。在尺寸小于40×40 µm 2的小型InGaN TJ µLED中，在20 A cm -2处的V f非常低，从3.15 V变化到3.19 V，然后在大型LED中显着增加。TJ的选择性区域生长（SAG）可以通过氢垂直扩散穿过p-GaN顶部的孔来克服这种尺寸限制。SAG过度生长的InGaN TJ µLED显示出与尺寸无关的低V f，范围为3.08 V至3.25V。与具有氧化铟锡（ITO）触点的普通µLED相比，封装的TJ µLED的外部量子效率（EQE）提高了6％。这项工作解决了MOCVD生长的TJ的关键挑战。