We investigated the electrical properties and operational stability of amorphous indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). We fabricated the a-ITZO TFTs using deposition by radio frequency sputtering at room temperature followed by a rapid thermal annealing (RTA) process at different temperatures and oxygen pressure ( P O2 ). This is a more practical annealing route compared to a conventional furnace. Based on film densification and oxygen vacancy optimization, the a-ITZO TFTs exhibited 9.8 cm 2 Vs −1 , 0.82 V/decade and 1.39 V, for saturation mobility, sub-threshold swing and threshold voltage, respectively. Operation stability tests and hysteresis behavior of a-ITZO TFTs suggest that oxygen vacancy concentration of a-ITZO thin films gradually decreases under higher P O2 , consequently affecting the threshold voltage and the shift seen after a gate bias stress test. This observation suggests that gate bias s...

中文翻译：

---

氧环境快速热退火研究RF溅射InSnZnO薄膜晶体管的电性能和工作稳定性

我们研究了非晶铟锡锌氧化物（a-ITZO）薄膜晶体管（TFT）的电性能和操作稳定性。我们使用室温下的射频溅射沉积技术，然后在不同的温度和氧气压力（P O2）下进行快速热退火（RTA）工艺，来制造a-ITZO TFT。与常规炉相比，这是一种更实用的退火途径。基于薄膜致密化和氧空位优化，a-ITZO TFT的饱和迁移率，亚阈值摆幅和阈值电压分别显示为9.8 cm 2 Vs -1，0.82 V / decade和1.39V。a-ITZO TFT的操作稳定性测试和磁滞行为表明，在较高的P O2下，a-ITZO薄膜的氧空位浓度逐渐降低，因此会影响阈值电压和栅极偏置应力测试后的偏移。该观察结果表明栅极偏置为...