AsTeGeSiN threshold switching devices, which have recently gained attention for their reliable operation, are investigated for the degradation mechanism under constant voltage stress (CVS). Threshold switching devices are essential for 3D stacking of high-density memories. The degradation mechanism can be divided into two conduction regions, i.e. before and after the threshold voltage ( V th ) by applying CVS. It is found that charge trapping, which can easily be recovered, is the main degradation mechanism in the low-conduction region. This is because Poole–Frankel conduction by deep traps occurred in the low-conduction region. However, trap generation may occur when going from deep traps to shallow traps, which is an important factor in the high-conduction region stress voltage. Switching stress for different duty cycles in two conduction regions is also performed. Therefore, when operating an AsTeGeSiN threshold-switching device as a selector, the read sequence is not a problem despite frequent usage. However, for the write sequence, reducing the number and duration of pulses helps extend the device's lifetime.

中文翻译：

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AsTeGeSiN 阈值开关器件中导电区的不同退化机制

最近因其可靠操作而受到关注的 AsTeGeSiN 阈值开关器件正在研究恒压应力 (CVS) 下的退化机制。阈值开关器件对于高密度存储器的 3D 堆叠至关重要。通过施加CVS，退化机制可以分为两个传导区域，即阈值电压（V th ）之前和之后。发现电荷俘获很容易恢复，是低导区的主要退化机制。这是因为在低导区发生了深陷阱的普尔-弗兰克尔传导。然而，从深陷阱到浅陷阱可能会产生陷阱，这是高导区应力电压的一个重要因素。还针对两个传导区域中的不同占空比执行开关应力。因此，当使用 AsTeGeSiN 阈值开关器件作为选择器时，尽管经常使用，但读取序列不是问题。但是，对于写入序列，减少脉冲的数量和持续时间有助于延长设备的使用寿命。