GaAs photodiode is a critical O/E receiver component for high-speed optical link in data centers and HPC. In this work, GaAs P-i-N photodiodes with four different aperture diameters are developed for 50 Gb/s data detection. Device layer structure and the fabrication process are optimized to achieve low dark current, high responsivity and high bandwidth. An O/E microwave model based on the device physics and structure is developed and the simulated frequency responses agree well with the measurements. The 50 Gb/s NRZ eye-diagrams of optical link test are validated via the use of 20 and $25~{\mu }{m}$ diameter photodiodes and a 29 GHz 850 nm oxide VCSEL.

中文翻译：

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用于 50 Gb/s 光链路的 GaAs 光电二极管的工艺优化和微波模型

GaAs 光电二极管是数据中心和 HPC 中高速光链路的关键 O/E 接收器组件。在这项工作中，开发了具有四种不同孔径直径的 GaAs PiN 光电二极管，用于 50 Gb/s 数据检测。优化器件层结构和制造工艺，以实现低暗电流、高响应度和高带宽。开发了基于器件物理和结构的 O/E 微波模型，模拟的频率响应与测量结果非常吻合。光链路测试的 50 Gb/s NRZ 眼图通过使用 20 和 $25~{\mu}{m}$ 直径光电二极管和 29 GHz 850 nm 氧化物 VCSEL 进行验证。