An InGaAlAs/InP membrane external-cavity surface-emitting laser (MECSEL) operating at 1770 nm is reported for the first time. A record high power of 7.7 W is registered at -20 °C. This is the record high emission power registered for any surface emitting InGaAlAs-based semiconductor laser at a wavelength longer than 1480 nm. A power value of 3.5 W is measured at 20 °C. The lasing is observed up to 60 °C. The high-power emission is achieved due to lateral and longitudinal power scaling realized by enlarging the pump spot diameter to 400 μm and the double-side pumping (DSP) of a single chip of extended thickness. We analyze the thermal properties and evaluate the temperature inside the laser membrane. We present the characteristic temperature (T0) as a function of temperature. The T0 is measured to be 70 K at -20 °C and 26 K at 55 °C.

中文翻译：

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膜外腔面发射激光器的高功率 1770 nm 发射


首次报道了工作波长为 1770 nm 的 InGaAlAs/InP 膜外腔表面发射激光器 (MECSEL)。 -20 °C 时记录了 7.7 W 的最高功率。这是波长超过 1480 nm 的表面发射 InGaAlAs 半导体激光器的最高发射功率记录。 20 °C 时测得的功率值为 3.5 W。在高达 60 °C 的温度下可观察到激光发射。通过将泵浦光斑直径扩大到400μm以及扩展厚度的单芯片的双面泵浦（DSP）实现了横向和纵向功率缩放，从而实现了高功率发射。我们分析热特性并评估激光膜内部的温度。我们将特征温度 (T0) 表示为温度的函数。 T0 在 -20 °C 时测得为 70 K，在 55 °C 时测得为 26 K。