For the first time, the temperature ρ(T) and magnetic field ρ(H) dependences of the electrical resistivity have been studied in compounds GdxPb1−xMo6S8 (x = 0.5, 0.7, 0.9), in the temperature range 2–300 K and magnetic fields up to 9 T. In the absence of a magnetic field, the compounds Gd0.9Pb0.1Mo6S8 and Gd0.7Pb0.3Mo6S8 exhibit features along ρ(T) (maximum and minimum for Gd0.9Pb0.1Mo6S8, and an inflection for Gd0.7Pb0.3Mo6S8), in some temperature ranges. The ρ(T) dependence of Gd0.5Pb0.5Mo6S8 is monotonic over the entire investigated temperature range. The presence of a small positive magnetoresistance (up to 2%) is established, which peaks at temperatures where there are features. It is shown that the dependence of the magnetization M(T) in the studied temperature range does not have features associated with long-range magnetic transformations. It is suggested that the features along the ρ(T) of Gd0.9Pb0.1Mo6S8 and Gd0.7Pb0.3Mo6S8 can be caused by band structure rearrangement, and the appearance of two charge carrier channels that are responsible for the semiconductor and metallic behavior of the temperature dependences of the electrical resistivity.

中文翻译：

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GdxPb1−xMo6S8 (x = 0.5、0.7 和 0.9) 超导体中电阻率随温度变化的特征

首次在化合物 GdxPb1−xMo6S8 (x = 0.5, 0.7, 0.9) 中研究了电阻率的温度 ρ(T) 和磁场 ρ(H) 依赖性，温度范围为 2-300 K 和高达 9 T 的磁场。 在没有磁场的情况下，化合物 Gd0.9Pb0.1Mo6S8 和 Gd0.7Pb0.3Mo6S8 表现出沿 ρ(T) 的特征（Gd0.9Pb0.1Mo6S8 的最大值和最小值，以及Gd0.7Pb0.3Mo6S8)，在某些温度范围内。Gd0.5Pb0.5Mo6S8 的 ρ(T) 依赖性在整个研究温度范围内是单调的。建立了一个小的正磁阻（高达 2%），它在有特征的温度下达到峰值。结果表明，在研究温度范围内磁化强度 M(T) 的依赖性不具有与长程磁转变相关的特征。