High-resolution transmission electron microscopy, electron diffraction, and electron energy-loss spectroscopy provide information on the structural evolution, dielectric function, and bandgap values of nanocrystalline 10 nm thick lanthanum doped hafnia (La:HfO₂) layers in TiN/La:HfO₂/TiN/SiO₂/Si irradiated with 24, 46, 72, and 160 MeV (0.2–1.2 MeV/u) Xe ions. Swift heavy Xe ions were expected to create significant atomic rearrangements when passed through a solid losing energy mainly through electronic excitation and ionization of the target atoms. Local heating and subsequent rapid cooling in the region around the ion track can lead to re-solidification with the formation of a new stable crystalline phase, and direct crystal-to-crystal transformations are possible. The structure evolution of hafnia nanocrystals from the orthorhombic Pbcm in the pristine layer to the tetragonal P4₂/nmc phase in the 160 MeV Xe ion irradiated layer was observed. The mixture of tetragonal and orthorhombic phases was found in samples irradiated with ions of intermediate energies. Textured hafnia layers were formed as a result of ion irradiation. The changes in plasmon line shape and the blueshift of the plasmon energy-loss peak from 14.9 eV in the pristine layer to 15.4 eV in 46 MeV and 15.9 eV in 160 MeV Xe ion irradiated hafnia reflect structural transformations, the increase in the Hf coordination number, and crystal orientations. Valence-electron energy-loss spectroscopy measurements showed a slight increase in the bandgap value from 6.1 eV in the pristine sample to 6.2 eV and 6.3 eV in irradiated samples with 46 and 160 MeV Xe ions, respectively, and dielectric functions changed insignificantly in irradiated hafnia layers.

中文翻译：

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快速Xe离子辐照的La掺杂氧化ha薄层的结构演化，带隙和介电功能

高分辨率透射电子显微镜，电子衍射和电子能量损失光谱提供有关TiN / La：HfO中10 nm厚的掺镧氧化镧（La：HfO ₂）纳米晶体层的结构演变，介电功能和带隙值的信息₂ /氮化钛/二氧化硅₂/ Si用24、46、72和160 MeV（0.2–1.2 MeV / u）Xe离子辐照。迅速重的Xe离子通过固体时，主要通过电子激发和目标原子的电离而失去能量，预计会引起重大的原子重排。离子轨迹周围区域的局部加热和随后的快速冷却会导致重新凝固，并形成新的稳定结晶相，并且可能会发生直接的晶体到晶体的转变。Hafnia纳米晶体的结构演化，从原始层的斜方Pbcm到四方P4 ₂ / nmc观察到160 MeV Xe离子辐照层中的气相。在用中能离子辐照的样品中发现了四方相和正交相的混合物。离子辐射的结果是形成了织纹的氧化镁层。等离子体激元线形的变化和等离子体激元能量损失峰从原始层的14.9 eV变为46 MeV的15.4 eV和160 MeV的15.9 eV Xe离子辐照的氧化f反映了结构转变，Hf配位数增加以及晶体取向。价电子能量损失谱测量结果显示，带隙值从原始样品中的6.1 eV分别略微增加到含有46 MeV和160 MeV Xe离子的辐照样品中的6.2 eV和6.3 eV，并且在辐照的氧化f中介电函数的变化不明显层。