Weak topological insulators are elusive topological materials that were subjected to relatively few experimental studies in the past owing to the lack of stable systems. Here, a detailed investigation of the low-temperature electrical transport on Bi 1 Se 1 thin films, a weak topological insulator, over a wide range of thicknesses has been carried out. Robust signatures of weak anti-localization were observed from the electrical transport measurements where the magnetic field is applied perpendicular and parallel to the sample plane. The low-field data are analyzed using the Hikami–Larkin–Nagaoka equation. By combining the transport parameters ( α, L ϕ) extracted from both perpendicular and parallel field measurements, our results indicate that apart from three-dimensional bulk states, 2D surface states are also present in our system and their origin could be linked to the weak topological nature of Bi 1 Se 1.

中文翻译：

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弱拓扑绝缘体 Bi1Se1 中依赖于厚度的电传输

弱拓扑绝缘体是难以捉摸的拓扑材料，由于缺乏稳定的系统，过去对其进行的实验研究相对较少。在这里，对 Bi 1 Se 1 薄膜（一种弱拓扑绝缘体）在很宽的厚度范围内的低温电传输进行了详细研究。从垂直和平行于样品平面施加磁场的电传输测量中观察到弱反定位的稳健特征。使用 Hikami-Larkin-Nagaoka 方程分析低场数据。通过结合从垂直和平行场测量中提取的输运参数 (α, L ϕ)，我们的结果表明，除了三维体态，