Abstract Bandgap and photoluminescence (PL) energy control of epitaxially grown II–VI quantum dots (QDs) are highly desirable for applications in optoelectronic devices, yet little work has been reported. Here, we present a wide tunability of PL emission for CdTe/ZnTe QDs through an impurity-free vacancy disordering method. To induce compressive stress at the dielectric layer/ZnTe interface, a SiO2 film is deposited onto the samples, followed by rapid thermal annealing to induce atomic interdiffusion. After the heat treatment, the PL spectra of the intermixed QDs show pronounced blueshifts in peak energy as large as ∼200 meV because of the reduced bandgap renormalization and decreased quantum confinement effects in addition to the dominant atomic interdiffusion effect. In addition, we present a thorough investigation on the modified physical properties of the intermixed QDs, including their lattice structure, thermal escape energy, and carrier dynamics, through quantitative X-ray and optical characterizations.

中文翻译：

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通过原子相互扩散和带隙重整化对量子点进行宽隙光致发光控制

摘要 外延生长的 II-VI 量子点 (QD) 的带隙和光致发光 (PL) 能量控制对于光电器件中的应用非常理想，但鲜有报道。在这里，我们通过无杂质空位无序方法为 CdTe/ZnTe QD 提供了广泛的 PL 发射可调性。为了在介电层/ZnTe 界面处产生压应力，在样品上沉积一层 SiO2 膜，然后进行快速热退火以引起原子相互扩散。热处理后，由于带隙重整化降低和量子限制效应降低以及占主导地位的原子相互扩散效应，混合 QD 的 PL 光谱显示出明显的峰值能量蓝移，高达 ~200 meV。此外，