Abstract The molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

中文翻译：

---

基于三维二硫化钼 (MoS2) 场效应晶体管的偏振敏感光电探测器

摘要 基于二硫化钼 (MoS2) 的光电探测器面临两大挑战：对偏振光不敏感和光响应性低。在此，通过应用自卷技术制造了基于单层 MoS2 的三维（3D）场效应晶体管（FET）。独特的微管结构使 3D MoS2 FET 变得对偏振敏感。此外，微管结构不仅提供了一个自然的共振微腔来增强内部的光场，而且还增加了光与二硫化钼的相互作用面积，从而产生了更高的光响应性。分别在 395 和 660 nm 处获得了高达 23.8 和 2.9 A/W 的光响应性，以及 1.64 的可比偏振比。3D MoS2 FET 的制造技术可以转移到其他二维材料上，