Abstract Advances in lighting and quantum computing will require new degrees of control over the emission of photons, where localized defects and the quantum confinement of carriers can be utilized. In this contribution, recent developments in the controlled redistribution of energy in rare earth (RE)–doped nanosystems, such as quantum dots or within bulk insulating and semiconducting hosts, will be reviewed. In their trivalent form, RE ions are particularly useful dopants because they retain much of their atomic nature regardless of their environment; however, in systems such as GaN and Si, the electronic states of the RE ions couple strongly to those of the host material by forming nanocomplexes. This coupling facilities fast energy transfer (ET) (<100 ps) and a carrier-mediate energy exchange between the host and the various states of the RE ions, which is mediated by the presence of carriers. A model has been developed using a set of rate equations, which takes into consideration the various ET pathways and the lifetimes of each state within the nanocomplex, which can be used to predict the nature of the emitted photons given an excitation condition. This model will be used to elucidate recent experimental observations in Eu-doped GaN.

中文翻译：

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高度互连的纳米系统中的时间调制能量改组

摘要 照明和量子计算的进步将需要对光子发射进行新程度的控制，其中可以利用局部缺陷和载流子的量子限制。在这篇文章中，将回顾稀土 (RE) 掺杂纳米系统（例如量子点或体绝缘和半导体主体）中能量受控再分配的最新进展。在三价形式中，稀土离子是特别有用的掺杂剂，因为无论环境如何，它们都保留了大部分原子性质；然而，在 GaN 和 Si 等系统中，稀土离子的电子态通过形成纳米复合物与主体材料的电子态强烈耦合。这种耦合有助于快速能量转移 (ET) (< 100 ps) 和载流子介导的宿主与 RE 离子的各种状态之间的能量交换，这是由载流子的存在介导的。已经使用一组速率方程开发了一个模型，该方程考虑了纳米复合物中的各种 ET 途径和每个状态的寿命，可用于预测给定激发条件下发射光子的性质。该模型将用于阐明 Eu 掺杂 GaN 的最新实验观察结果。