ABSTRACT Thin films of Cu2O were deposited on ITO glass substrates by using the electrodeposition method. The prepared samples were annealed at different temperatures range varying from 200 to 350°C. Chemical, structural and optical properties of samples were studied using XRD, Raman spectroscopy, U-V–visible and photoluminescence spectroscopies. The results revealed that all samples at temperatures lower than 300°C are mainly single cubic Cu2O phase. However, after increasing the annealing temperature to 350°C, Cu2O films are partially oxidized and contain two phases of Cu2O and CuO. Raman results agree with the crystallite size results where the intensity of Raman peaks increases simultaneously with increasing grain size. The optical measurements showed that the band gaps values of the electrodeposited samples increase from 2.12 to 2.24 eV. Two optical gaps were observed at 1.58 and 2.26 eV for the sample annealed at 350°C which confirms the presence of two phases CuO and Cu2O.

中文翻译：

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电沉积Cu2O性能的退火温度研究

摘要 Cu2O 薄膜通过使用电沉积方法沉积在 ITO 玻璃基板上。制备的样品在 200 至 350°C 的不同温度范围内退火。使用 XRD、拉曼光谱、紫外-可见光和光致发光光谱研究样品的化学、结构和光学性质。结果表明，所有样品在低于 300°C 的温度下主要是单立方 Cu2O 相。然而，在将退火温度提高到 350°C 后，Cu2O 薄膜被部分氧化并含有 Cu2O 和 CuO 两相。拉曼结果与晶粒尺寸结果一致，其中拉曼峰的强度随着晶粒尺寸的增加而增加。光学测量表明，电沉积样品的带隙值从 2.12 eV 增加到 2.24 eV。