ABSTRACT

Memristor technology has become an attractive option for use in-memory architectures, in-memory computing, and logic applications. Memristor crossbar array performance is dependent upon sneak paths. Our research characterises the sneak paths in crossbar arrays where the current can sneak through non-selected cells. We present equations for characterising sneak paths as a function of the size of the array, resistance values, input voltage, and I/O switch-vector. We also derive formulas to calculate the number of sneak paths in various array sizes and describe conditions that determine the length of the sneak paths. The resulting equations enable us to predict the sneak paths and sneak path currents for various array sizes to determine the constraints to the resistive memristor circuit. Our work characterising sneak paths provides boundary conditions for applications that use memristor crossbar arrays and provides insight to memristor crossbar testing.

摘要

忆阻器技术已成为使用内存架构、内存计算和逻辑应用的有吸引力的选择。忆阻器交叉开关阵列性能取决于潜行路径。我们的研究表征了交叉阵列中的潜行路径，其中电流可以潜入未选择的单元格。我们提出了将潜路径表征为阵列大小、电阻值、输入电压和 I/O 开关矢量的函数的方程。我们还推导出公式来计算各种数组大小的潜行路径数量，并描述确定潜行路径长度的条件。由此产生的方程使我们能够预测各种阵列尺寸的潜路径和潜路径电流，以确定电阻忆阻器电路的约束条件。