In the present work, gallium arsenide samples implanted with 325 keV Mn⁺ ions for the fluence of 5 × 10¹⁵, 1 × 10¹⁶ and 2 × 10¹⁶ ions cm⁻², have been investigated using Raman scattering and Atomic force microscopy measurements. The sample implanted with the fluence of 1 × 10¹⁶ ions cm⁻² was further irradiated using 5 MeV Si⁺⁺ ion beams for the fluence of 1 × 10¹⁶ ions cm⁻² at a substrate temperature of 350°C for recrystallization. Raman peaks obtained at 293.51 and 269.35 cm⁻¹ were assigned to longitudinal optical (LO) phonon mode and transverse optical (TO) phonon mode of gallium arsenide, respectively. The shift in the Raman peaks towards higher wave-number with respect to ion fluence indicated the presence of residual compressive stress within the samples. The Mn and (MnAs) like mode were observed after implantation. The additional mode like GaMn was also seen in sample after irradiation with 5 MeV Si⁺⁺ ions. The composition of manganese atoms in gallium arsenide estimated from the Raman spectra for the ion fluence 5 × 10¹⁵, 1 × 10¹⁶ and 2 × 10¹⁶ ions cm⁻² were found to be 0.74%, 1.40% and 2.80%, respectively. The Phonon coherence length estimated from the Phonon Confinement Model by fitting the LO phonon signal was found to increase from 39.40 to 47.10 nm with respect to ion fluence. AFM images of non-implanted sample showed the smooth micrograph with root mean square surface roughness of 0.41 nm. After implantation, the different sizes of clusters were observed on the surfaces of GaAs. The shape and size of the clusters were found to depend on the ion fluence.

在目前的工作中，已经使用拉曼散射和原子力显微镜测量研究了注入 325 keV Mn ⁺离子以获得 5 × 10 ¹⁵、1 × 10 ¹⁶和 2 × 10 ¹⁶离子 cm ^-2的注量的砷化镓样品。以1×10 ¹⁶离子cm ^-2的注量注入的样品在350℃的衬底温度下使用5 MeV Si ⁺⁺离子束进一步照射以获得1×10 ¹⁶离子cm ^-2的注量以进行再结晶。在 293.51 和 269.35 cm ^-1处获得的拉曼峰分别分配给砷化镓的纵向光学（LO）声子模式和横向光学（TO）声子模式。相对于离子注量，拉曼峰向更高波数的移动表明样品内存在残余压应力。注入后观察到 Mn 和 (MnAs) 样模式。在用 5 MeV Si ⁺⁺离子照射后，在样品中也看到了像 GaMn 这样的附加模式。根据离子注量 5 × 10 ¹⁵、1 × 10 ¹⁶和 2 × 10 ¹⁶离子 cm ^-2的拉曼光谱估计砷化镓中锰原子的组成分别为 0.74%、1.40% 和 2.80%。发现通过拟合 LO 声子信号从声子限制模型估计的声子相干长度相对于离子注量从 39.40 增加到 47.10 nm。未植入样品的AFM图像显示出光滑的显微照片，均方根表面粗糙度为0.41 nm。注入后，在 GaAs 表面观察到不同大小的团簇。发现簇的形状和大小取决于离子注量。