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Design of substrate integrated plasmonicwaveguide bandpass filter with T-shaped spoof surface plasmon polaritons
Electromagnetics ( IF 0.6 ) Pub Date : 2020-10-25 , DOI: 10.1080/02726343.2020.1838055
Peng Chen 1, 2 , Luping Li 1 , Kai Yang 1, 2 , Feng Hua 3
Affiliation  

ABSTRACT A novel substrate integrated plasmonic waveguide (SIPW) filter with T-shaped slot line spoof surface plasmon polaritons (SSPPs) is proposed in this paper. By etching the SSPPs array between the two rows of the metal vias of the substrate integrated waveguide (SIW) structure, the SIPW bandpass filter can independently adjust the low cutoff frequency by changing the SIW geometric parameters and the high cutoff frequency by changing the SSPP geometric parameters, respectively. Comparing with the traditional SIPW filter with signal layer or double layers linear slot line SSPPs, the proposed SIPW filter with T-shaped SSPPs has smaller circuit size thanks to the better electromagnetic field confinement ability of the T-shaped SSPPs. The dispersion properties of the SIW unit and the T-shaped SSPPs are discussed and the parameters effect on filter’s performance are numerically investigated. A bandpass SIPW filter with T-shaped SSPPs is designed and fabricated with the proposed design method. The measurement results show that its passband is at 5.6–7.3 GHz with the return loss higher than 10 dB and the maximal insertion loss 1.8 dB. Also, its out-of-band spurious rejection is higher than 40 dB at the bandwidth 8.1–14.8 GHz. The agreements between the simulated results and measured results demonstrate the effectiveness of the proposed SIPW filter with T-shaped SSPPs.

中文翻译:

带有T形表面等离子体激元的基片集成等离子体波导带通滤波器设计

摘要 本文提出了一种具有 T 形槽线欺骗表面等离子体激元 (SSPP) 的新型衬底集成等离子体波导 (SIPW) 滤波器。通过蚀刻衬底集成波导(SIW)结构的两排金属过孔之间的SSPPs阵列,SIPW带通滤波器可以通过改变SIW几何参数来独立调整低截止频率,通过改变SSPP几何参数来独立调整高截止频率参数,分别。与具有信号层或双层线性槽线 SSPP 的传统 SIPW 滤波器相比,由于 T 型 SSPP 具有更好的电磁场限制能力,所提出的具有 T 型 SSPP 的 SIPW 滤波器具有更小的电路尺寸。讨论了SIW单元和T形SSPP的色散特性,并数值研究了参数对滤波器性能的影响。使用所提出的设计方法设计并制造了具有 T 形 SSPP 的带通 SIPW 滤波器。测量结果表明,其通带为5.6-7.3 GHz,回波损耗大于10 dB,最大插入损耗为1.8 dB。此外,其带外杂散抑制在 8.1–14.8 GHz 带宽下高于 40 dB。模拟结果和测量结果之间的一致性证明了所提出的具有 T 形 SSPP 的 SIPW 滤波器的有效性。3 GHz,回波损耗高于 10 dB,最大插入损耗为 1.8 dB。此外,其带外杂散抑制在 8.1–14.8 GHz 带宽下高于 40 dB。模拟结果和测量结果之间的一致性证明了所提出的具有 T 形 SSPP 的 SIPW 滤波器的有效性。3 GHz,回波损耗高于 10 dB,最大插入损耗为 1.8 dB。此外,其带外杂散抑制在 8.1–14.8 GHz 带宽下高于 40 dB。模拟结果和测量结果之间的一致性证明了所提出的具有 T 形 SSPP 的 SIPW 滤波器的有效性。
更新日期:2020-10-25
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