Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC,Physica Status Solidi (B) - Basic Solid State Physics

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Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-10-30 , DOI: 10.1002/pssb.201900781
Clint D. Frye ₁ , John W. Murphy ₁ , Qinghui Shao ₁ , Lars F. Voss ₁ , Sara E. Harrison ₁ , James H. Edgar ₂ , Rebecca J. Nikolić ₁

Affiliation

Most electrical characterization of radiation damage to semiconductors is conducted on full devices or on low‐doped material. However, evaluating the radiation hardness is challenging in less mature semiconductor systems where low‐doped material is unavailable and full devices are difficult to realize. Herein, temperature‐dependent Hall effect measurements are used to demonstrate α particle‐induced radiation effects in p‐type 4H‐SiC with a room temperature hole concentration of

1.8 \times 10^{17} {cm}^{- 3}

. The 4H‐SiC is irradiated by α particles from a ²¹⁰Po source over a fluence of

1 \times 10^{11}

–

1 \times 10^{13} α {cm}^{- 2}

. Modeling the hole concentration as a function of temperature shows that α radiation causes hole compensation through the introduction of hole traps. The radiation also induces a reduction in hole mobility due to an increase in defect‐related scattering centers. At low temperatures and increasingly higher fluences, the conduction mechanism changes from band conduction to another mechanism.

中文翻译：

α辐射的p型4H-SiC的霍尔效应表征

辐射损坏半导体的大多数电气特性是在完整器件或低掺杂材料上进行的。但是，在缺乏低掺杂材料且难以实现完整器件的较不成熟的半导体系统中，评估辐射硬度具有挑战性。在这里，温度依赖的霍尔效应测量用于证明室温下空穴浓度为p的p型4H-SiC中α粒子引起的辐射效应。