High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire,Physica Status Solidi (B) - Basic Solid State Physics

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High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-10-27 , DOI: 10.1002/pssb.202000352
Kanako Shojiki ₁ , Kenjiro Uesugi ₂ , Shigeyuki Kuboya ₂ , Takafumi Inamori ₁ , Shin Kawabata ₁ , Hideto Miyake _{1,

3}

Affiliation

This study comprehensively investigates the properties of metalorganic vapor phase epitaxy (MOVPE)‐grown AlN films on high‐quality face‐to‐face annealed sputtered AlN (FFA Sp‐AlN) templates on sapphire substrates, which are highly important to control the surface morphology for various applications, such as UV light‐emitting diodes and laser diodes. The conditions of thermal cleaning and AlN growth by MOVPE are investigated to remove numerous small islands on as‐annealed FFA Sp‐AlN. Subsequent to thermal cleaning in H₂ + NH₃ at 1300 °C, MOVPE growth is performed with varying NH₃ flow rate and growth temperature (T_g) under a constant pressure and group‐III flow rate. An atomically flat surface with an atomic step‐and‐terrace structure is obtained at a growth rate of ≈1.0 μm h⁻¹ and a T_g of 1300 °C. Transmission electron microscopy images and secondary‐ion mass spectrometry reveal low dislocation densities and impurity concentrations. Finally, the effects of compressive strain in FFA Sp‐AlN on the lattice constant and curvature of the MOVPE‐grown AlN film on FFA Sp‐AlN are investigated. The compressive strain of the AlN film, which is carried over from FFA Sp‐AlN, can prevent crack formation but leads to a large wafer curvature after cooling down from the T_g.

中文翻译：

通过蓝宝石表面溅射AlN的面对面退火制备的高质量AlN模板

这项研究全面研究了在蓝宝石衬底上高质量的面对面退火溅射AlN（FFA Sp-AlN）模板上的金属有机气相外延（MOVPE）生长的AlN膜的特性，这对于控制表面形态非常重要适用于各种应用，例如UV发光二极管和激光二极管。研究了MOVPE进行热清洗和AlN生长的条件，以去除退火FFA Sp-AlN上的许多小岛。在1300°C的H ₂ + NH ₃中进行热清洗后，在变化的NH ₃流速和生长温度（T _g）在恒定压力和III组流量下。具有≈1.0μmh ^-1的生长速率和1300°C的T _g可获得具有原子阶梯结构的原子平面。透射电子显微镜图像和二次离子质谱仪显示出低位错密度和杂质浓度。最后，研究了FFA Sp-AlN中的压缩应变对FFA Sp-AlN上MOVPE生长的AlN膜的晶格常数和曲率的影响。从FFA Sp‐AlN传递来的AlN膜的压缩应变可以防止裂纹形成，但在从T _g冷却后会导致较大的晶片曲率。

更新日期：2020-10-27

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