Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐MgxZn1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure,Physica Status Solidi (A) - Applications and Materials Science

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Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐MgxZn1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-10-27 , DOI: 10.1002/pssa.202000440
Shantanu Kaushik Chetia _{1,

2} , Amit Kumar Das ₁ , Rohini Shreedharan Ajimsha ₁ , Vikas Kumar Sahu _{1,

2} , Pankaj Misra _{1,

2}

Affiliation

Herein, diode characteristics of n‐Mg_xZn_1−xO/p‐Si heterojunctions grown by pulsed laser deposition at different oxygen ambient pressures are investigated. It is found that the heterojunctions grown at lower oxygen growth pressure of 1.0 × 10⁻²mbar and below do not show rectifying diode‐like behavior, whereas those grown at higher oxygen pressures at and above 2.5 × 10⁻²mbar exhibit perfect diode‐like rectifying characteristics. The diode characteristics are found to improve significantly with increasing oxygen ambient pressure during the growth of Mg_xZn_1−xO film. The current–voltage measurements show that the n‐Mg_xZn_1−xO/p‐Si heterojunction diode grown at a higher oxygen ambient pressure of ≈1.0 × 10⁻¹mbar has the lowest reverse saturation current of ≈19 nA and highest rectification ratio of ≈1.4 × 10⁴. The capacitance–voltage measurements reveal that the depletion layer width of heterojunction diodes increases manifold with increasing oxygen ambient pressure during the growth of Mg_xZn_1−xO, which is understood in terms of decrease in carrier concentrations in the Mg_xZn_1−xO thin films grown at higher oxygen ambient pressures. The n‐Mg_xZn_1−xO/p‐Si heterojunction diodes, grown at high oxygen ambient pressures, with low reverse saturation current, high rectification ratio, and large depletion width may have potential application in wide‐bandgap nanoelectronic devices and UV enhanced photodetectors.

中文翻译：

增强脉冲激光沉积n-MgxZn1-xO / p-Si异质结的二极管特性：氧环境压力的作用

在此，研究了在不同的氧气环境压力下通过脉冲激光沉积生长的n-Mg _x Zn _{1 - x} O / p-Si异质结的二极管特性。发现在1.0×10 ^-2 mbar或更低的较低氧气生长压力下生长的异质结没有显示出类似整流二极管的行为，而在2.5×10 ^-2 mbar或更高的较高氧气压力下生长的异质结表现出了完美的二极管特性。喜欢整顿特征。发现在Mg _x Zn _{1 - x} O膜的生长过程中，二极管的特性随着氧气环境压力的增加而显着改善。电流-电压测量表明，n-Mg _xZn _{1 - x} O / p-Si异质结二极管在较高的氧气环境压力下（≈1.0×10 ^-1 mbar）生长，具有最低的反向饱和电流≈19nA和最高的整流比≈1.4×10 ⁴。电容-电压测量表明，有Mg的生长期间增加氧气环境压力歧管的异质结二极管的增加耗尽层宽度_X的Zn _{1 - X} O，其在载流子浓度在所述Mg减少方面理解_X的Zn _{1 - x} O薄膜在较高的氧气环境压力下生长。在n-Mg系_X锌_{1 -x} O / p-Si异质结二极管在高氧环境压力下生长，具有低反向饱和电流，高整流比和大耗尽层宽度，可能在宽带隙纳米电子器件和UV增强光电探测器中有潜在应用。

更新日期：2020-12-04

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