The design and simulation of high frequency memristor emulator using carbon nanotube field effect transistor (CNTFET) based Operational Transconductance Amplifier (OTA) has been presented out in this paper. The proposed memristor emulator design consists of two CNTFET‐OTAs and one capacitor with both grounded and floating topologies available for applications. The proposed CNTFET memristor design emulator outperforms the conventional complementary metal oxide semiconductor (CMOS) based memristor emulator topologies. The performance comparison with the reported memristor emulator designs reveals that the proposed grounded and floating memristor design can work over a frequency range of 1 GHz and 10 MHz respectively in comparison to conventional CMOS based design, which works over a maximum range of 8 MHz and 0.4 MHz for grounded and floating memristor designs respectively. The proposed memristor emulator circuit also offers electronic tunability of the memristance which is important for digitally programmable application of memristors.

中文翻译：

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基于碳纳米管场效应晶体管（CNTFET）运算跨导放大器（OTA）的高频忆阻器仿真器设计

提出了基于碳纳米管场效应晶体管（CNTFET）的运算跨导放大器（OTA）的高频忆阻器仿真器的设计和仿真。拟议的忆阻器仿真器设计包括两个CNTFET-OTA和一个具有接地和浮动拓扑的电容器，可供应用。所提出的CNTFET忆阻器设计仿真器优于传统的基于互补金属氧化物半导体（CMOS）的忆阻器仿真器拓扑。与报道的忆阻器仿真器设计的性能比较表明，与传统的基于CMOS的设计相比，建议的接地忆阻器和浮动忆阻器设计分别可以在1 GHz和10 MHz的频率范围内工作，后者的最大范围为8 MHz和0。 。接地忆阻器和浮动忆阻器设计分别为4 MHz。所提出的忆阻器仿真器电路还提供了忆阻器的电子可调性，这对于忆阻器的数字可编程应用很重要。