Impact of Nitrogen on the Crystallization and Microstructure of Ge‐Rich GeSbTe Alloys,Physica Status Solidi-Rapid Research Letters

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Impact of Nitrogen on the Crystallization and Microstructure of Ge‐Rich GeSbTe Alloys
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-10-27 , DOI: 10.1002/pssr.202000443
Minh Anh Luong ₁ , Dingfang Wen ₁ , Eloïse Rahier ₁ , Nicolas Ratel Ramond ₁ , Béatrice Pecassou ₁ , Yannick Le Friec ₂ , Daniel Benoit ₂ , Alain Claverie ₁

Affiliation

The influence of N concentration on the crystallization kinetics, microstructural evolution, and composition of Ge‐rich GeSbTe (GGST) alloys during thermal annealing, using X‐ray diffraction and scanning and transmission electron microscopy is reported. It is shown that the incorporation of N in GGST tends to slow down the phase separation, crystallization, and growth processes during annealing. This can be attributed to the reduced diffusivity of Ge, which interacts and quickly bonds with N. Technological advantages of N doping are also discussed, considering the increased stability of the amorphous phase with respect to its parent crystalline phase, finer microstructure, flatness of the GeSbTe (GST) films after crystallization, and disappearance of the low‐resistivity hexagonal phase at high temperature.

中文翻译：

氮对富锗GeSbTe合金结晶和组织的影响

使用X射线衍射，扫描和透射电子显微镜观察了氮浓度对热退火过程中富Ge的GeSbTe（GGST）合金的结晶动力学，显微组织演变和组成的影响。结果表明，在GGST中掺入N会减慢退火过程中的相分离，结晶和生长过程。这可以归因于Ge的扩散性降低，它与N相互作用并快速键合。还讨论了N掺杂的技术优势，考虑到非晶相相对于其母体结晶相的稳定性提高，微观结构更细，平整度高。结晶后的GeSbTe（GST）薄膜，以及高温下低电阻率六角相的消失。

更新日期：2020-10-27

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