The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films,Journal of Raman Spectroscopy

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The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films
Journal of Raman Spectroscopy ( IF 2.4 ) Pub Date : 2020-10-26 , DOI: 10.1002/jrs.6007
Marwa Karim _{1,

2} , Joao Marcelo J. Lopes ₁ , Manfred Ramsteiner ₁

Affiliation

We utilized excitation in the ultraviolet (UV) spectral range for the study of hexagonal boron nitride (h‐BN) thin films on different substrates by Raman spectroscopy. Whereas UV excitation offers fundamental advantages for the investigation of h‐BN and heterostructures with graphene, the actual Raman spectra recorded under ambient conditions reveal a temporal decay of the signal intensity. The disappearance of the Raman signal is found to be induced by thermally activated chemical reactions with ambient molecules at the h‐BN surface. The chemical reactions could be strongly suppressed under vacuum conditions which, however, favor the formation of a carbonaceous surface contamination layer. For the improvement of the signal‐to‐noise ratio under ambient conditions, we propose a line‐scan method for the acquisition of UV Raman spectra in atomically thin h‐BN, a material which is expected to play a key role in future technologies based on 2D van der Waals heterostructures.

中文翻译：

六方氮化硼薄膜拉曼光谱中紫外激光激发的影响

我们利用紫外（UV）光谱范围内的激发，通过拉曼光谱研究不同衬底上的六方氮化硼（h-BN）薄膜。紫外线激发为研究h-BN和石墨烯的异质结构提供了根本优势，而在环境条件下记录的实际拉曼光谱显示出信号强度的时间衰减。发现拉曼信号的消失是由于与h-BN表面的环境分子发生热活化化学反应而引起的。在真空条件下可以强烈地抑制化学反应，然而，这有利于形成碳质表面污染层。为了改善环境条件下的信噪比，

更新日期：2020-12-10

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