A systematic method for the verification of high frequency measurement (up-to 500 GHz) of silicon germanium heterojunction bipolar transistor (SiGe HBT) is proposed. First of all, the method involves an accurate estimation of the effects of passive environment on the overall measurement by a detailed electro-magnetic (EM) simulation. This ensures that the complete measurement environment like probes, pads and access lines along with the appropriate layouts are precisely included in the EM simulation framework. In order to additionally include the active device like SiGe HBTs, technology computer aided design (TCAD) tool is used to simulate the device S-parameters. TCAD simulation results are fed into an EM-plus-SPICE simulation framework to emulate a complete on-wafer measurement environment. The final simulation results show appreciable correlation with the on-wafer measurement data up-to 500 GHz.

提出了一种验证硅锗异质结双极晶体管（SiGe HBT）的高频测量（高达500 GHz）的系统方法。首先，该方法涉及通过详细的电磁（EM）仿真来精确估算被动环境对总体测量的影响。这样可确保将完整的测量环境（如探针，焊盘和接入线）以及适当的布局精确地包含在EM仿真框架中。为了额外包括有源器件（如SiGe HBT），使用技术计算机辅助设计（TCAD）工具来模拟器件S。参数。TCAD仿真结果被输入到EM-plus-SPICE仿真框架中，以仿真完整的晶圆上测量环境。最终的仿真结果表明，与高达500 GHz的晶圆上测量数据具有明显的相关性。