Recently, negative capacitance (NC) effect in the dielectric/ferroelectric (DE/FE) bilayer system has received significant attention due to its potential in achieving sub- 60 mV/decade subthreshold swing in FETs as well as extremely large capacitance density in dynamic random-access memory (DRAM). However, such reports, to date, are primarily based on conventional perovskite FE materials which are not compatible with the present CMOS technology. Herein, we study the interfacial charge density (${\mathit{\sigma }}_{\mathit{i}})$and negative capacitance (NC) effect in CMOS compatible Hf-Zr-Al-O (DE) /Hf_0.5Zr_0.5O₂ (FE) bilayer system. The DE layer of various thicknesses (5–20 Å) was deposited on the top of FE layer (100 Å) and the DE layer thickness was found to play a crucial role in determining${\mathit{\sigma }}_{\mathit{i}}$. The NC effect in the aforesaid DE/FE system was suppressed due to the contribution of ${\mathit{\sigma }}_{\mathit{i}}$. The ${\mathit{\sigma }}_{\mathit{i}}$at the interface of the DE layer and FE layer was found to be in the range of −0.57 Cm⁻² to −0.18 Cm⁻² for the DE thickness range of 5–20 Å.

最近，介电/铁电（DE / FE）双层系统中的负电容（NC）效应已受到广泛关注，因为它具有在FET中实现低于60 mV /十年亚阈值摆幅的潜力，以及在动态随机环境中具有极大的电容密度-访问内存（DRAM）。然而，迄今为止，此类报道主要基于与目前的CMOS技术不兼容的常规钙钛矿FE材料。在这里，我们研究界面电荷密度（${\mathit{\sigma }}_{\mathit{一世}}）$CMOS兼容Hf-Zr-Al-O（DE）/ Hf _0.5 Zr _0.5 O ₂（FE）双层系统中的负电容（NC）效应。在FE层（100Å）的顶部沉积了各种厚度（5–20Å）的DE层，发现DE层的厚度在确定${\mathit{\sigma }}_{\mathit{一世}}$。由于DE的贡献，抑制了上述DE / FE系统中的NC效应。${\mathit{\sigma }}_{\mathit{一世}}$。的${\mathit{\sigma }}_{\mathit{一世}}$对于5-20的DE厚度范围，发现在DE层和FE层的界面处的碳原子数在-0.57 Cm ^-2到-0.18 Cm ^-2的范围内。